Technology Platforms / RF Substrates / RF SIP (System in Package)

RF SIP (System in Package)

Compact footprint SiPs using glass enables next-generation RF and wireless designs to facilitate wideband applications from DC to 100 GHz.

RF sip

Solution Overview

Glass-based RF SiP interposers allow you to offer significant product differentiation. Our proprietary APEX® Glass allows you to realize high-value system integration in the most compact footprint enabling you to meet even the most demanding product definitions for next generation RF and wireless products.

At the heart of our interposer technology is the ability to manufacture precise through glass vias (TGVs, 50 microns in diameter) for I/Os with tight metal redistribution line and spacing (<30 microns) with micron-scale precision.  Additionally, the in-glass manufacturing of integrated passive devices (e.g. inductors & capacitors) enable advanced RF performance.

Key Benefits

  • Heterogeneous integration (HI), enabling the packaging of digital IC, analog IC, RF IC, and MEMS into a common package

  • Reduce chip size by 70% compared to PCBs

  • Up to 20% reduction in power utility

  • More than a 50% increase in wireless bandwidth

  • Wideband applications ranging from DC to 100 GHz

  • Embed passive devices (e.g. inductors, capacitors, baluns, antennas, etc.) into the package

  • Lower cost of ownership by minimizing assembly costs

  • Reduce time to market

lumped element

Figure 1. Lumped-Element RF Filter

Our APEX® Glass provides the highest systems-level integration of passive and active devices for your RF SiP products compared to any other packaging technology available today.

ipd matching

Figure 2. IPD Matching Networks

SiP assembly options are customizable to the application. Standard die integration approaches, such as direct mount utilizing SMT processes, wire bonding, and flip-chip assemblies, are easily accomplished with 3DGS 2.5D SiP products.

Common Applications

  • Wireless handheld and infrastructure devices

  • High-frequency, high-performance RF devices

  • 400 GB/sec and 600 GB/sec optical transceiver electronic packages

  • MEMS sensor packages

  • Internet infrastructure components

  • Integrated photonic components

  • Heterogeneous integration electronic packages

PARAMETERS TYPICAL PERFORMANCE LIMITS
SIZE <5mm x 5mm <40mm x 40mm
HEIGHT 300µm >150µm
TGV DIAMETER >40µm >25µm
METAL REDISTRIBUTION LINE/SPACE 30µm / 30µm 10µm / 10µm
FREQUENCY RANGES 0.5 – 100GHz DC – 200GHz
CONNECTORS SMT, flip-chip, wire bond SMT, flip-chip, wire bond
COMPLIANCE RoHS compliant, Lead-free RoHS compliant, Lead-free